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The BBY6602VH6327XTSA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies in the SC79 surface-mount package. It features a single-diode configuration with a cathode marking of 'O1s'. The device supports a maximum reverse voltage of 12 V and a forward current of 50 mA, operating within a temperature range of -55 °C to +150 °C. At 1 MHz, the capacitance ranges from 66 pF to 71.5 pF at 1 V reverse bias, yielding a typical capacitance ratio of 5.41 between 1 V and 4.5 V. The series resistance is typically 0.25 Ω at 470 MHz.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required package type and marking code. Ensure compliance with AEC-Q101 qualification standards if automotive integration is intended. Review material content sheets for environmental regulations.
Select this component when a high capacitance ratio and low series resistance are critical for VCO linearity. The SC79 package offers a compact footprint compared to SOT-23 alternatives. Consider the specific capacitance group (01 or 02) requirements, as deliveries contain mixed groups without direct selection capability.
This part belongs to the BBY66 series of silicon tuning diodes, which includes variants like BBY66-05 and BBY66-05W in different packages such as SOT-23 and SOT-323. All members share similar hyperabrupt characteristics but differ in physical dimensions and lead inductance specifications.
Direct substitutes include other BBY66 series parts like BBY66-05 or BBY66-05W, provided the package form factor and pinout compatibility are verified. Cross-referencing electrical parameters such as capacitance ratios and reverse voltage ratings is essential before substitution.