Single Bipolar Transistors BC182 TRE TIN/LEAD product image

BC182 TRE TIN/LEAD

$0.23
  • Description:50V 100MA 350MW TH TRANSISTOR-SM
  • Series:-

SKU:9bcc15e1c4b9 Category: Brand:

  
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BC182 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 50V 100MA 350MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC182 TRE TIN/LEAD

  • Description:50V 100MA 350MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC182 TRE TIN/LEAD

BC182 TRE TIN/LEAD

Single Bipolar Transistors Overview

The BC182 TRE TIN/LEAD is an NPN silicon small-signal bipolar junction transistor manufactured by Central Semiconductor. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical ratings include a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 45 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 200 mA with a power dissipation capacity of 300 mW. Its gain-bandwidth product (fT) is specified at 280 MHz, ensuring suitability for general-purpose amplification and switching applications in electronic circuits.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction designed for general-purpose amplification and switching tasks
  • Through-hole mounting configuration utilizing the standard TO-92-3 leaded package
  • High thermal stability capable of operating at junction temperatures up to 150°C

Single Bipolar Transistors Applications

  • General-purpose signal amplification in audio and radio frequency circuits
  • Electronic switching applications requiring low-power control
  • Driver stages for small-signal processing systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm the presence of the tin-lead plating finish. Confirm that the procurement channel provides official datasheets and RoHS compliance details. Ensure the component matches the exact Central Semiconductor part number to avoid substitution errors regarding pinout or electrical characteristics.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with a 30 V collector-emitter rating and 200 mA current capability is required. The TO-92-3 package facilitates easy integration into through-hole printed circuit boards. Consider the 280 MHz transition frequency for high-speed switching needs. Verify that the 300 mW power dissipation limit aligns with the thermal management design of the target application.

Single Bipolar Transistors Part Context

This component belongs to the BC182 series of small-signal transistors produced by Central Semiconductor. The series is characterized by its use in low-power analog and digital circuits. The specific variant includes a tin-lead surface finish, which influences soldering compatibility and environmental compliance status compared to lead-free alternatives.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in gain ranges or maximum voltage ratings. Verify pinout compatibility before implementation.

BC182 TRE TIN/LEADBC182 TRE TIN/LEAD
$0.23
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