Single Bipolar Transistors BC182B_J35Z product image

BC182B_J35Z

$0.03
  • Description:TRANS NPN 50V 0.1A TO-92-3
  • Series:-

SKU:353add585967 Category: Brand:

  
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BC182B_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC182B_J35Z

  • Description:TRANS NPN 50V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10µA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC182B_J35Z

BC182B_J35Z

Single Bipolar Transistors Overview

The BC182B_J35Z is a single NPN silicon small-signal bipolar junction transistor manufactured by onsemi. It is housed in a TO-92-3 (TO-226AA) through-hole package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. Key electrical characteristics include a transition frequency of 150 MHz, a maximum power dissipation of 350 mW, and a DC current gain (hFE) of at least 40 when tested at 10 µA base current and 5 V collector-emitter voltage. The saturation voltage is specified at a maximum of 600 mV under conditions of 5 mA base current and 100 mA collector current.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction designed for general-purpose amplification and switching applications
  • Through-hole mounting capability via the TO-92-3 leaded package format
  • Operational reliability across an extended junction temperature range from -55°C to +150°C

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-frequency switching operations
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against the manufacturer's official datasheet to confirm pinout orientation and binning specifications. Confirm component status as discontinued or active prior to procurement planning. Ensure the TO-92-3 package dimensions match the target PCB footprint requirements. Validate RoHS compliance documentation if environmental regulations apply to the final assembly.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with 50 V breakdown and 100 mA current handling is required in a compact through-hole form factor. The BC182B variant offers a defined minimum hFE of 40, suitable for basic amplification tasks where high gain is not critical. Consider thermal management constraints due to the 350 mW power dissipation limit in the plastic TO-92 case.

Single Bipolar Transistors Part Context

This part belongs to the BC182 family of NPN transistors produced by onsemi. The BC182 series is widely recognized for its use in low-power analog and digital circuits. The BC182B designation specifically indicates a particular gain bin within the series, distinguishing it from other variants like the BC182C which may offer higher gain thresholds.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other manufacturers offering BC182B equivalents in TO-92 packages. Verify that substitute parts meet the same 50 V Vceo, 100 mA Ic, and 150 MHz fT specifications. Ensure pin compatibility for direct replacement without circuit modification.

BC182B_J35ZBC182B_J35Z
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