Single Bipolar Transistors BC212A TRE PBFREE product image

BC212A TRE PBFREE

$0.20
  • Description:50V 200MA 300MW TH TRANSISTOR-SM
  • Series:BC212

SKU:c28404bae295 Category: Brand:

  
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BC212A TRE PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 50V 200MA 300MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC212A TRE PBFREE

  • Description:50V 200MA 300MW TH TRANSISTOR-SM
  • Series:BC212
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC212A TRE PBFREE

BC212A TRE PBFREE

Single Bipolar Transistors Overview

The BC212A TRE PBFREE is an NPN silicon small-signal transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical characteristics include a collector-emitter breakdown voltage (Vceo) of 50 V, a collector-base breakdown voltage (Vcbo) of 75 V, and an emitter-base breakdown voltage (Vebo) of 6 V. The device supports a maximum continuous collector current of 100 mA with a power dissipation rating of 350 mW. It features a minimum DC current gain (hFE) of 110 at 2 mA and offers a transition frequency (fT) of 150 MHz.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction for reliable small-signal amplification
  • High DC current gain suitable for low-noise applications
  • Wide operating temperature range for harsh environments

Single Bipolar Transistors Applications

  • General-purpose low-noise amplification
  • Audio pre-amplifier stages
  • Switching circuits in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer datasheet for the BC212A TRE PBFREE to confirm exact hFE binning and pinout configurations before integration. Ensure that thermal management strategies align with the 350 mW power dissipation limit in the TO-92-3 package. Cross-reference RoHS compliance documentation to meet environmental regulatory requirements for your specific manufacturing region.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN small-signal transistor with moderate current handling and high gain is required. The TO-92-3 package facilitates easy prototyping and through-hole assembly. Consider the 150 MHz transition frequency for audio or low-frequency RF applications where higher speed devices are unnecessary.

Single Bipolar Transistors Part Context

This part belongs to the BC212 series of NPN transistors, widely used in general-purpose electronic circuits. The 'TRE' suffix typically indicates tape and reel packaging, while 'PBFREE' denotes lead-free composition compliant with RoHS standards. Central Semiconductor manufactures these components using silicon planar technology.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the BC212A TRE PBFREE were not found in the provided source material.

BC212A TRE PBFREEBC212A TRE PBFREE
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