Single Bipolar Transistors BC212B APM TIN/LEAD product image

BC212B APM TIN/LEAD

$0.23
  • Description:50V 200MA 300MW TH TRANSISTOR-SM
  • Series:BC212

SKU:fd7f6798ff23 Category: Brand:

  
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BC212B APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 50V 200MA 300MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC212B APM TIN/LEAD

  • Description:50V 200MA 300MW TH TRANSISTOR-SM
  • Series:BC212
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC212B APM TIN/LEAD

BC212B APM TIN/LEAD

Single Bipolar Transistors Overview

The BC212B APM TIN/LEAD is a PNP silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes the TO-92 (TO-226AA) through-hole package with matte tin plating. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. It offers a minimum DC current gain (hFE) of 60, suitable for general-purpose amplification and switching applications in electronic circuits.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration for complementary circuit designs
  • Small-signal capability optimized for low-power amplification tasks
  • Through-hole mounting style compatible with standard PCB layouts

Single Bipolar Transistors Applications

  • General-purpose signal amplification stages
  • Low-power switching applications
  • Complementary pairs in audio or logic circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning classification required for your design, as the 'B' suffix typically denotes a tighter gain range than the base model. Confirm that the matte tin lead finish meets your assembly process requirements. Ensure the TO-92 package dimensions align with your existing board footprint specifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP small-signal transistor with 50V breakdown and 100mA current capacity is needed. It serves as a direct replacement for generic BC212B equivalents from other manufacturers. Consider thermal dissipation limits if operating near maximum ratings in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the widely used BC212 series of NPN/PNP matched transistor pairs. The BC212 variant is the PNP counterpart to the BC211 NPN transistor. These devices are industry-standard components for general electronics, often utilized in biasing networks and amplifier stages where moderate gain and voltage handling are sufficient.

Single Bipolar Transistors Replacement Considerations

  • BC212B (Generic)
  • BC327B
  • 2N5088

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC212B?

The maximum collector-emitter voltage (VCEO) is rated at 50V.

Does the BC212B support surface mount installation?

No, the BC212B APM TIN/LEAD is designed for through-hole mounting using the TO-92 package.

What is the minimum DC current gain specified for this device?

The minimum DC current gain (hFE) is specified as 60.

BC212B APM TIN/LEADBC212B APM TIN/LEAD
$0.23
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