BC237B TIN/LEAD

Single Bipolar Transistors Overview

The BC237B is a small signal NPN silicon transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92 plastic through-hole package with three pins. The device supports a maximum collector current of 0.1 A and a collector-emitter voltage of 45 V. It features a minimum DC current gain (hFE) of 200, ensuring reliable amplification performance. The component operates within a temperature range up to 150 °C and has a maximum power dissipation of 0.35 W.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for general-purpose amplification
• High DC current gain for signal processing
• Through-hole TO-92 plastic packaging

Single Bipolar Transistors Applications

• General purpose amplifier circuits
• Switching applications
• Small signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer designation on the datasheet or official documentation to confirm the part originates from Central Semiconductor Corp. Ensure the ordering suffix matches the required lead-free or tin/lead specifications as defined in the official product data sheet. Cross-reference the exact part number with authorized distributor catalogs to validate availability and authenticity before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a small signal NPN transistor with moderate current handling and high gain is required. The TO-92 package suits through-hole PCB designs. Verify that the 45 V collector-emitter voltage rating meets the circuit requirements. Confirm the thermal management capabilities align with the 0.35 W power dissipation limit under expected operating conditions.

Single Bipolar Transistors Part Context

This component belongs to the BC237 series of NPN general-purpose transistors. Variants such as BC237A, BC237B, and BC237C typically differ primarily in their DC current gain ranges. The BC237B specifically offers a higher minimum gain compared to lower-grade variants, making it suitable for applications requiring consistent amplification factors without precise binning.