Single Bipolar Transistors BC239BBU product image

BC239BBU

  • Description:TRANS NPN 25V 0.1A TO-92-3
  • Series:-

SKU:c3bdf7dfab88 Category: Brand:

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BC239BBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC239BBU

  • Description:TRANS NPN 25V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC239BBU

BC239BBU

Single Bipolar Transistors Overview

The BC239BBU is a single NPN silicon epitaxial planar transistor manufactured by onsemi, housed in a TO-92-3 (TO-226AA) through-hole package. It features a maximum collector-emitter voltage of 25 V and a continuous collector current rating of 100 mA. The device supports a transition frequency of 250 MHz and dissipates up to 500 mW of power. DC current gain is specified at a minimum of 180 when tested at 2 mA collector current and 5 V collector-emitter voltage. The saturation voltage is limited to 600 mV at 5 mA base and 100 mA collector currents.

Single Bipolar Transistors Feature Summary

  • NPN silicon epitaxial planar construction for reliable small-signal amplification
  • High DC current gain performance suitable for low-level signal processing
  • Through-hole mounting capability within a standard TO-92-3 plastic package

Single Bipolar Transistors Applications

  • General-purpose small-signal amplification circuits
  • Low-noise audio pre-amplifier stages
  • Switching applications requiring moderate speed and current handling

Single Bipolar Transistors Procurement Notes

Verify the specific suffix BBU against the manufacturer's latest datasheet to confirm pinout orientation and electrical tolerances. Confirm RoHS compliance status as manufacturing processes may evolve. Check part status carefully, as availability can vary significantly across distributors. Ensure the ordering quantity matches the supplier's standard packaging configuration. Validate that the component meets all required environmental and export control classifications for the intended deployment region.

Single Bipolar Transistors Selection Notes

Select this component when a 25 V breakdown voltage and 100 mA current capacity are sufficient for the design requirements. Consider the 250 MHz transition frequency for high-frequency signal integrity needs. Evaluate the thermal management capabilities provided by the TO-92-3 package for the expected power dissipation levels. Compare the hFE gain specifications against circuit sensitivity requirements to ensure adequate amplification margins without excessive variability.

Single Bipolar Transistors Part Context

This transistor belongs to the BC237/BC238/BC239 family of NPN silicon transistors produced by onsemi. The family shares similar physical dimensions and general application profiles but differs in voltage ratings and gain characteristics. The BC239 variant specifically targets applications requiring lower voltage tolerance compared to the BC237 or BC238 counterparts while maintaining comparable current handling capabilities.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include BC239CBU and BC239RLRE. Verify compatibility with these alternatives by cross-referencing their respective datasheets for matching voltage, current, and gain specifications.

BC239BBUBC239BBU

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