BC32725

Single Bipolar Transistors Overview

The onsemi BC32725 is a discontinued PNP bipolar junction transistor (BJT) housed in a TO-92-3 through-hole package. It features a maximum collector current of 800 mA and a collector-emitter breakdown voltage of 45 V. The device has a transition frequency of 100 MHz, a maximum power dissipation of 625 mW, and a DC current gain (hFE) minimum of 160 at 100 mA and 1 V. The saturation voltage is 700 mV at 50 mA base and 500 mA collector currents.

Single Bipolar Transistors Feature Summary

• PNP general-purpose switching and amplification capability
• High DC current gain for efficient drive requirements
• Robust thermal performance with high junction temperature rating

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-power switching applications
• Driver stages for relay or LED loads

Single Bipolar Transistors Procurement Notes

Verify component obsolescence status before design finalization. Confirm availability of parameter-equivalent alternatives such as the BC32725BU variant from onsemi. Ensure supply chain stability for legacy projects requiring this specific discontinued part number.

Single Bipolar Transistors Selection Notes

Select this component for low-current PNP applications requiring standard TO-92 packaging. Consider the BC32725BU as a direct functional substitute if available inventory permits. Evaluate thermal management constraints due to the 625 mW power dissipation limit in enclosed environments.

Single Bipolar Transistors Part Context

This component belongs to the BC327 series of PNP transistors manufactured by onsemi. It serves as a general-purpose discrete semiconductor device designed for small-signal amplification and switching tasks within electronic circuits.

Single Bipolar Transistors Replacement Considerations

The BC32725BU is identified as a parameter-equivalent replacement option available from onsemi.