BC32740BU

Single Bipolar Transistors Overview

The BC32740BU is a PNP epitaxial silicon transistor manufactured by onsemi, housed in a TO-92-3 bulk package. It features a collector-emitter voltage of -45 V and a continuous collector current of -800 mA. The device has a maximum power dissipation of 625 mW at 25°C, with a thermal resistance of 200 °C/W. DC current gain (hFE) ranges from 250 to 630 at IC = -100 mA and VCE = -1 V. The transition frequency is 100 MHz, and the operating junction temperature extends up to 150°C.

Single Bipolar Transistors Feature Summary

• Designed for switching and amplifier applications
• Suitable for AF-driver stages and low-power output stages
• Acts as a complement to BC337/BC338 NPN transistors

Single Bipolar Transistors Applications

• Switching circuits
• Amplifier applications
• AF-driver stages
• Low-power output stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning requirements against the datasheet classification table before procurement. Confirm that the TO-92-3 bulk packaging aligns with assembly line capabilities. Ensure thermal management strategies account for the 625 mW power dissipation limit and derating factors above 25°C ambient temperature.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high DC current gain (250–630) is required for general-purpose amplification or switching. Consider the -45 V collector-emitter breakdown voltage and -800 mA current limits during circuit design. Verify compatibility with complementary NPN devices like the BC337 if push-pull configurations are utilized.

Single Bipolar Transistors Part Context

The BC32740BU belongs to the BC327 series of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following integration. This series provides standardized performance characteristics for general-purpose electronic applications, maintaining consistent pinout and electrical profiles across different gain classifications within the same package type.

Single Bipolar Transistors Replacement Considerations

BC32725BU

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC32740BU?

The DC current gain (hFE) ranges from 250 to 630 when measured at IC = -100 mA and VCE = -1 V.

Is the BC32740BU suitable for audio frequency driver stages?

Yes, the datasheet explicitly lists suitability for AF-driver stages and low-power output applications.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at -45 V.