Single Bipolar Transistors BC337-16 B1G product image

BC337-16 B1G

  • Description:TRANS NPN 45V 0.8A TO-92
  • Series:-

SKU:082c22a0da91 Category: Brand:

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BC337-16 B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 45V 0.8A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC337-16 B1G

  • Description:TRANS NPN 45V 0.8A TO-92
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC337-16 B1G

BC337-16 B1G

Single Bipolar Transistors Overview

The BC337-16 B1G is an NPN silicon epitaxial planar transistor designed for switching and audio frequency amplifier applications. It features a maximum collector current of 800 mA, a collector-emitter breakdown voltage of 45 V, and a total power dissipation of 625 mW. The device belongs to the -16 gain group, providing a DC current gain (hFE) range of 100 to 250 at IC=10mA. Transition frequency is rated at 100 MHz, with a junction temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Subdivided into specific gain groups (-16, -25, -40) based on DC current gain requirements
  • Utilizes TO-92 small outline plastic package with matte tin plated leads
  • Compliant with RoHS standards and manufactured using green compound materials

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Audio frequency amplification stages
  • Driver transistor applications

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix 'B1G' corresponds to the specified packing code and manufacturing site details provided in the datasheet. Confirm that the component meets the required moisture sensitivity level and lead-free soldering specifications before integration into production workflows.

Single Bipolar Transistors Selection Notes

Select this variant when a specific low-to-mid current gain range is required. The -16 designation ensures hFE values between 100 and 250. Ensure the application operates within the 625 mW power dissipation limit and respects the 45 V collector-emitter voltage rating for reliable performance.

Single Bipolar Transistors Part Context

This component is part of the BC337/BC338 series produced by Taiwan Semiconductor. The series includes variants differentiated by gain groups and complementary PNP types. The BC337 specifically denotes the NPN configuration within this small signal product line.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC337-25 and BC337-40, which share identical electrical ratings but differ in DC current gain grouping. Verify pinout compatibility and package dimensions when substituting.

BC337-16 B1GBC337-16 B1G

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