BC337-16

Single Bipolar Transistors Overview

The Diotec Semiconductor BC337-16 is a general-purpose NPN silicon transistor housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 800 mA. The device belongs to the -16 current gain group, providing a DC current gain (hFE) range of 100 to 160 at IC = 100 mA and VCE = 1 V. Maximum power dissipation is 625 mW, with a junction temperature rating up to 150°C.

Single Bipolar Transistors Feature Summary

• Three distinct current gain groups available for precise amplification control
• Compliant with RoHS, REACH, and Conflict Minerals regulations
• Designed for commercial and industrial grade applications

Single Bipolar Transistors Applications

• Signal processing circuits
• Electronic switching applications
• Amplification stages

Single Bipolar Transistors Procurement Notes

Verify that the specific ordering suffix matches the required current gain bin (-16). Confirm compliance requirements such as AEC-Q101 if automotive standards are needed, noting that standard versions do not carry this qualification. Ensure the package type corresponds to the mechanical data provided in the official datasheet.

Single Bipolar Transistors Selection Notes

Select the BC337-16 when a minimum hFE of 100 is required alongside a maximum of 160. This variant suits designs needing tighter gain tolerances than the -25 or -40 groups. Verify thermal management capabilities, as the 625 mW dissipation limit depends on lead temperature conditions specified in the datasheet.

Single Bipolar Transistors Part Context

This component is part of the BC337/BC338 family of universal NPN transistors manufactured by Diotec Semiconductor. The series offers complementary PNP options and is designed for standard commercial and industrial electronics. The product line includes various gain groupings to accommodate different circuit sensitivity requirements.

Single Bipolar Transistors Replacement Considerations

Check equivalent parts from other manufacturers offering identical 45V, 800mA specifications and TO-92 packaging. Ensure replacement devices match the -16 gain bin (100-160 hFE) to maintain circuit performance without redesign.