BC447G

Description：TRANS NPN 80V 0.3A TO92
Series：-

SKU:4a7ec619662a Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

BC447G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 80V 0.3A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC447G

Description：TRANS NPN 80V 0.3A TO92
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：300 mA
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 2mA, 5V
Power - Max：625 mW
Frequency - Transition：200MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92 (TO-226)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for BC447G

BC447G

Single Bipolar Transistors Overview

The onsemi BC447G is an NPN epitaxial silicon transistor housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 100mA. The device offers a DC current gain (hFE) ranging from 110 to 800 under standard test conditions. Key electrical parameters include a collector cutoff current (ICBO) maximum of 15nA, a collector-emitter saturation voltage (VCE(sat)) typical value of 90mV at low currents, and a transition frequency (fT) typical value of 300MHz.

Single Bipolar Transistors Feature Summary

High voltage capability suitable for switching and amplification circuits
Wide range of DC current gain options for flexible design integration
Low noise performance characteristics
Lead-free construction compliant with environmental standards

Single Bipolar Transistors Applications

General purpose switching applications
Audio frequency amplification circuits
Low noise signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version and ordering suffixes to ensure compatibility with your design requirements. Confirm that the component meets all relevant environmental regulations and lead-free specifications required for your manufacturing process. Cross-reference the absolute maximum ratings with your circuit's operational limits to prevent device failure.

Single Bipolar Transistors Selection Notes

Select this component when a general-purpose NPN transistor with moderate voltage handling and high current gain is required. Consider the wide hFE spread when designing bias networks to ensure consistent performance across different units. Evaluate the thermal dissipation capabilities relative to your expected power consumption levels.

Single Bipolar Transistors Part Context

This part belongs to the BC546-BC550 series of NPN epitaxial silicon transistors. It is functionally complementary to the PNP BC556-BC560 series, allowing for matched pairs in push-pull configurations. The series is designed for general electronic circuit applications requiring reliable switching and amplification.