Single Bipolar Transistors BC546B TIN/LEAD product image

BC546B TIN/LEAD

$0.23
  • Description:65V 100MA 500MW TH TRANSISTOR-SM
  • Series:BC546

SKU:d0f04b0d8eda Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC546B TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 65V 100MA 500MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC546B TIN/LEAD

  • Description:65V 100MA 500MW TH TRANSISTOR-SM
  • Series:BC546
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC546B TIN/LEAD

BC546B TIN/LEAD

Single Bipolar Transistors Overview

The BC546B is an NPN epitaxial silicon small-signal transistor housed in a TO-92 package. It features a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 65 V. The device offers a minimum DC current gain (hFE) of 200, ensuring reliable amplification performance. Designed for general-purpose applications, it operates at a maximum junction temperature of 150 °C with a power dissipation rating of 500 mW.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial silicon construction for stable signal processing
  • Low noise characteristics suitable for sensitive amplifier stages
  • High DC current gain for effective signal amplification

Single Bipolar Transistors Applications

  • General-purpose low-noise amplifiers
  • Switching circuits requiring moderate voltage ratings
  • Audio pre-amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as Central Semiconductor Corp may distribute or rebrand components originally manufactured by Fairchild or ON Semiconductor. Confirm that the TIN/LEAD plating matches the required solderability standards for the intended assembly process. Ensure the part number suffix corresponds to the exact electrical binning and packaging format required for the design.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with a 65V rating and high current gain is required. The TO-92 through-hole package facilitates easy prototyping and manual assembly. Consider the tin/lead termination if lead-free compliance is not mandated for the final product application.

Single Bipolar Transistors Part Context

This component belongs to the BC546 series of NPN transistors, widely used in consumer electronics and industrial control systems. The 'B' suffix typically denotes a specific hFE gain range, providing consistency in circuit performance compared to unsorted variants within the same family.

Single Bipolar Transistors Replacement Considerations

  • BC546BTAR
  • BC546BTA

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 65 V.

Is this transistor suitable for low-noise applications?

Yes, the BC546B is characterized as a low-noise transistor, making it appropriate for audio and RF pre-amplifier stages.

What is the minimum DC current gain?

The minimum DC current gain (hFE) is specified as 200 under standard test conditions.

BC546B TIN/LEADBC546B TIN/LEAD
$0.23
Buy Now