Single Bipolar Transistors BC546C A1G product image

BC546C A1G

  • Description:TRANS NPN 65V 0.1A TO-92
  • Series:-

SKU:25c54d057857 Category: Brand:

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BC546C A1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 65V 0.1A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC546C A1G

  • Description:TRANS NPN 65V 0.1A TO-92
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC546C A1G

BC546C A1G

Single Bipolar Transistors Overview

The BC546C A1G is a silicon NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 65V, a maximum collector-base voltage (VCBO) of 80V, and a maximum continuous collector current (Ic) of 100mA. The device features a minimum DC current gain (hFE) of 220 at 2mA and 5V, with a maximum power dissipation of 500mW.

Single Bipolar Transistors Feature Summary

  • High DC current gain classification for signal amplification
  • Wide operating temperature range suitable for industrial environments
  • Through-hole mounting capability for standard PCB integration

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Switching applications in low-power electronics
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify component authenticity due to end-of-life status. Confirm RoHS compliance documentation matches specific manufacturing batches. Check for alternative sourcing channels as primary distribution may be limited. Ensure storage conditions prevent moisture damage prior to soldering.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required for small-signal applications. Compare hFE ranges against other series variants if tighter gain tolerances are necessary. Verify thermal management requirements align with the 500mW dissipation limit in the target enclosure design.

Single Bipolar Transistors Part Context

This part belongs to the BC5xxA/B/C series of general-purpose NPN transistors. The 'C' suffix indicates a higher minimum current gain bin compared to 'A' or 'B' variants. It serves as a legacy component often replaced by newer equivalents in modern designs.

Single Bipolar Transistors Replacement Considerations

  • BC546C

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC546C A1G?

The minimum DC current gain (hFE) is 220 when measured at a collector current of 2mA and a collector-emitter voltage of 5V.

Is the BC546C A1G lead-free?

Yes, the component complies with RoHS3 specifications and is lead-free.

BC546C A1GBC546C A1G

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