Single Bipolar Transistors BC547ABU product image

BC547ABU

$0.02
  • Description:TRANS NPN 45V 0.1A TO-92-3
  • Series:-

SKU:6c9efa2bf495 Category: Brand:

  
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BC547ABU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC547ABU

  • Description:TRANS NPN 45V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC547ABU

BC547ABU

Single Bipolar Transistors Overview

The BC547ABU is an NPN silicon epitaxial planar transistor manufactured by onsemi, designed for general-purpose amplification and switching applications. It operates with a maximum collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. The device features a DC current gain (hFE) range of 200 to 450 at IC=2mA and VCE=5V. Key electrical limits include a collector-base voltage (VCBO) of 60 V, an emitter-base voltage (VEBO) of 6 V, and a transition frequency (fT) of 300 MHz. Power dissipation is rated at 500 mW, with a maximum junction temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • High DC current gain classification (B grade) suitable for sensitive signal amplification
  • Low noise operation optimized for audio and RF pre-amplifier stages
  • Robust thermal performance supporting high junction temperatures up to 150°C

Single Bipolar Transistors Applications

  • General-purpose small-signal amplification circuits
  • Audio pre-amplifier stages requiring low noise characteristics
  • Electronic switching applications in consumer devices

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'BU' against the manufacturer's official datasheet to confirm pinout orientation and exact hFE binning. Ensure the component matches the TO-92-3 package dimensions specified in the mechanical drawings. Cross-reference RoHS compliance status with the latest environmental declaration provided by onsemi for the specific manufacturing batch.

Single Bipolar Transistors Selection Notes

Select this component when a higher minimum current gain than standard grades is required for linear amplifier stability. Compare the 45V VCEO rating against circuit supply voltages to ensure adequate headroom. Consider the 300 MHz fT for high-frequency response requirements relative to alternative BJT families.

Single Bipolar Transistors Part Context

This part belongs to the BC547 series of NPN transistors, which are widely used as standard discrete components in electronic design. The 'A' designation indicates a specific gain bin, while 'BU' typically denotes the tape-and-reel packaging format for automated assembly processes within the broader family of general-purpose silicon planar transistors.

Single Bipolar Transistors Replacement Considerations

BC547B: Offers lower minimum gain (110-220). BC547C: Provides higher minimum gain (420-800). MMBT100: Surface-mount equivalent with similar electrical characteristics.

BC547ABUBC547ABU
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