BC547CZL1G

Description：TRANS NPN 45V 0.1A TO92
Series：-

SKU:b2c86bb1f80c Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

BC547CZL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC547CZL1G

Description：TRANS NPN 45V 0.1A TO92
Series：-
Mfr：onsemi
Package：Cut Tape (CT),Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
Supplier Device Package：TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC547CZL1G

BC547CZL1G

Single Bipolar Transistors Overview

The BC547CZL1G is an NPN silicon epitaxial planar transistor manufactured by onsemi. It operates with a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device features a minimum DC current gain (hFE) of 420 at IC = 10 mA, VCE = 5 V. It is housed in a TO-92 package (CASE 29-11) and supports junction temperatures from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

NPN epitaxial silicon planar design for general-purpose amplification
High DC current gain classification (C grade)
Lead-free packaging compliant with environmental directives

Single Bipolar Transistors Applications

General purpose switching circuits
Low noise amplifier stages
Signal processing applications

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix ZL1G corresponds to the specific Ammo Box packaging configuration as defined in the official onsemi documentation. Confirm that the component meets Pb-Free requirements and matches the CASE 29-11 mechanical outline before integration into the supply chain.

Single Bipolar Transistors Selection Notes

Select this variant when a high minimum hFE of 420 is required for consistent amplification performance. Ensure the circuit design accommodates the 45 V collector-emitter voltage limit and 625 mW power dissipation capability within the specified thermal constraints.

Single Bipolar Transistors Part Context

This component belongs to the BC546/547/548 series of NPN general-purpose transistors. The 'C' suffix indicates the highest gain bin within the BC547 family. It serves as the complementary counterpart to the PNP BC557 transistor.