BC548A_J35Z

Single Bipolar Transistors Overview

The BC548A_J35Z is an NPN silicon planar epitaxial transistor manufactured by onsemi. It features a collector-emitter voltage of 30V and a continuous collector current of 100mA. The device has a maximum power dissipation of 500mW at 25°C ambient temperature. DC current gain (hFE) is specified with a minimum value of 110 at Ic=2mA and Vce=5V. The transition frequency is 300MHz, and the junction temperature rating is 150°C. It utilizes a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

• NPN silicon planar epitaxial construction for reliable small-signal amplification
• High DC current gain suitable for general-purpose switching and amplification tasks
• Low noise characteristics optimized for RF applications
• Lead-free packaging compliant with environmental directives

Single Bipolar Transistors Applications

• General purpose amplifier circuits
• Switching applications in low-power systems
• RF signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official onsemi documentation to confirm binning or tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer datasheet as manufacturing processes may vary. Check component availability status as older series parts may have limited supply chains. Ensure the ordering part number matches the exact electrical binning required for the design.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with 30V breakdown and 100mA current capability is required. The A variant provides a specific hFE range distinct from B or C variants. Consider thermal derating requirements for operation above 25°C ambient temperature. Verify pinout compatibility with existing TO-92 footprints during PCB layout.

Single Bipolar Transistors Part Context

This component belongs to the BC546/BC547/BC548 series of NPN general-purpose transistors. The BC548 variant specifically offers a 30V collector-emitter voltage rating. The 'A' suffix typically denotes a specific DC current gain binning range defined by the manufacturer. These devices are widely used in consumer electronics and industrial control circuits requiring small-signal handling.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC548A from other manufacturers such as Fairchild or NXP, provided they meet the same 30V, 100mA, and TO-92 package specifications. Verify that substitute parts match the hFE binning requirements if strict gain consistency is necessary for the application.