Single Bipolar Transistors BC548BZL1G product image

BC548BZL1G

$0.03
  • Description:TRANS NPN 30V 0.1A TO92
  • Series:-

SKU:f851b0e288c3 Category: Brand:

  
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BC548BZL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC548BZL1G

  • Description:TRANS NPN 30V 0.1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Bulk,Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC548BZL1G

BC548BZL1G

Single Bipolar Transistors Overview

The BC548BZL1G is an NPN silicon planar epitaxial transistor manufactured by onsemi, designed for amplifier applications. It utilizes a TO-92 (Case 29) package with three leads arranged as Collector, Base, and Emitter. The device features a collector-emitter voltage of 30 Vdc and a continuous collector current rating of 100 mAdc. Total device dissipation is rated at 625 mW at 25°C ambient temperature. The DC current gain (hFE) ranges from 200 to 450 when tested at IC = 10 mA and VCE = 5.0 V. The unit operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • NPN silicon planar epitaxial construction
  • Lead-free packaging compliant with environmental directives
  • Low noise figure suitable for signal amplification

Single Bipolar Transistors Applications

  • Amplifier circuits
  • General purpose switching
  • Small-signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix ZL1G corresponds to the Ammo Box shipping configuration containing 2000 units per reel. Confirm that the 'G' designation indicates Pb-Free status as defined in the manufacturer's documentation. Ensure compatibility with standard TO-92 mounting requirements and verify lead finish specifications against assembly constraints.

Single Bipolar Transistors Selection Notes

Select this component when a moderate DC current gain between 200 and 450 is required for NPN amplification tasks. The 30V collector-emitter breakdown voltage limits suitability for high-voltage applications compared to the BC546 or BC547 variants. Verify that the TO-92 through-hole package aligns with the target PCB layout and thermal management strategy.

Single Bipolar Transistors Part Context

This part belongs to the BC546/BC547/BC548 series of NPN general-purpose transistors. The BC548 variant specifically offers a lower voltage rating than the BC546 but shares similar current handling capabilities. The B suffix denotes a specific binning category for DC current gain, distinguishing it from A and C grade devices within the same family.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes include BC548BG and BC548BRL1G from onsemi, which share identical electrical characteristics and pinout configurations. Other manufacturers producing BC548B equivalents may be considered if mechanical dimensions and hFE ranges match the original specification.

BC548BZL1GBC548BZL1G
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