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BC549ATA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC549ATA is an NPN silicon small-signal transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 30V and a continuous collector current rating of 100mA. The device provides a minimum DC current gain (hFE) of 110 at a collector current of 2mA and Vce of 5V. It is housed in a TO-92 surface-mount package with leaded terminations, suitable for general-purpose amplification and switching applications.
Verify the specific suffix 'A' to confirm the hFE binning grade required for the application. Confirm RoHS compliance status as historical data indicates potential non-compliance for certain manufacturing batches. Ensure the TO-92 SMD package variant matches the PCB footprint requirements. Check terminal plating specifications against solderability standards.
Select this component when a low-noise NPN transistor with moderate gain is required. Compare the hFE range against the BC547 or BC548 series if higher or lower gain thresholds are necessary. Consider the thermal dissipation limits relative to the expected operating current. Verify that the 30V breakdown voltage meets the circuit's maximum supply requirements.
This part belongs to the BC549 family of NPN transistors, which are distinguished from the BC547 and BC548 series by their specific current gain groupings. The 'A' suffix typically denotes a specific hFE range, often starting at a minimum gain of 110. These devices are widely used in consumer electronics and industrial control systems requiring reliable small-signal handling.
The minimum DC current gain (hFE) is 110 when measured at a collector current of 2mA and a collector-emitter voltage of 5V.
Yes, the datasheet specifies that the case connection is isolated.
The maximum power dissipation is rated at 500mW according to Taiwan Semiconductor data, while NXP documentation lists an absolute maximum of 625mW.
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