BC558BZL1

Single Bipolar Transistors Overview

The BC558BZL1 is a PNP silicon small-signal amplifier transistor manufactured by onsemi. It features a maximum collector-emitter voltage of -30 Vdc and a continuous collector current rating of -100 mAdc. The device operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a minimum DC current gain (hFE) of 150 for the B series at IC = -2.0 mAdc, and a typical current-gain bandwidth product (fT) of 360 MHz. The component is housed in a TO-92 package.

Single Bipolar Transistors Feature Summary

• Designed for low-noise amplifier applications
• Utilizes lead-free packaging compliant with environmental standards
• Optimized for high-frequency signal processing

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Low-noise audio pre-amplifiers
• High-frequency signal processing stages

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix ZL1 corresponds to the specific Ammo Box shipping configuration as documented in the manufacturer's official ordering information table. Confirm that the component meets Pb-Free requirements if specified for the project. Ensure technical specifications align with the application requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -30 V collector-emitter breakdown voltage is required. The B series designation indicates a specific DC current gain binning range suitable for consistent amplifier performance. Consider the thermal resistance values and safe operating area curves for power dissipation limits in the design phase.

Single Bipolar Transistors Part Context

This part belongs to the BC55x family of PNP silicon amplifier transistors, which also includes the BC556 and BC557 variants. These devices share similar physical packages and general electrical structures but differ primarily in their collector-emitter voltage ratings and specific gain groupings. The BC558 variant specifically targets applications requiring lower voltage tolerance compared to the BC556.

Single Bipolar Transistors Replacement Considerations

• BC558BRL1
• BC558BZL1G

Single Bipolar Transistors FAQ

What is the pinout configuration for the BC558BZL1?

When viewing the flat side of the TO-92 package with leads facing down, Pin 1 is the Collector, Pin 2 is the Base, and Pin 3 is the Emitter.

How does the 'B' series designation affect the device performance?

The 'B' series specifies a minimum DC current gain (hFE) of 150 at a collector current of -2.0 mAdc, ensuring higher amplification capability compared to other gain bins.

What is the maximum power dissipation capability of this transistor?

The total device dissipation is rated at 625 mW at an ambient temperature of 25°C, with a derating factor of 5.0 mW/°C above this temperature.