BC635

Single Bipolar Transistors Overview

The BC635 is an NPN epitaxial silicon transistor designed for switching and amplifier applications. It features a collector-emitter voltage of 45 V, a continuous collector current of 1 A, and a peak collector current of 1.5 A. The device provides a DC current gain ranging from 25 to 250 depending on the operating current. It has a maximum collector power dissipation of 1 W and operates with a junction temperature up to 150 °C. The component utilizes a TO-92 package.

Single Bipolar Transistors Feature Summary

• Epitaxial silicon construction optimized for medium power switching and amplification tasks
• High current handling capability supporting continuous operation at 1 A
• Broad DC current gain range suitable for diverse circuit requirements

Single Bipolar Transistors Applications

• General purpose switching circuits
• Amplifier stages
• Complementary pairing with PNP transistors

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin as specifications may vary between Fairchild Semiconductor and other producers like Infineon or Siemens. Confirm compliance with RoHS standards if required by your design constraints. Ensure the TO-92 package dimensions match your PCB footprint requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with 45 V breakdown and 1 A current capacity is needed. Consider the BC637 or BC639 variants if higher voltage ratings are necessary. Evaluate thermal management needs given the 1 W power dissipation limit in the TO-92 package.

Single Bipolar Transistors Part Context

This transistor belongs to a family including the BC637 and BC639, differentiated primarily by their voltage ratings. It serves as the NPN counterpart to the BC636 series. Originally manufactured by Fairchild Semiconductor, production rights have been transferred to entities such as Infineon and Siemens.

Single Bipolar Transistors Replacement Considerations

BC637, BC639, BC636TFR (complementary), MPS6531_01 (similar NPN)

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC635?

The maximum collector-emitter voltage is 45 V.

Does the BC635 support high-frequency applications?

Yes, it has a current gain bandwidth product of 100 MHz.

What is the complementary PNP transistor for the BC635?

The BC636 is the designated complementary PNP transistor.