BC635_D26Z

Single Bipolar Transistors Overview

The BC635-D26Z is an NPN medium power transistor manufactured by onsemi, housed in a TO-92 package. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 45 V. The device has a maximum power dissipation of 0.8 W at 25°C ambient temperature and supports junction temperatures up to 150°C. Designed for switching and amplifier applications, it utilizes epitaxial silicon construction.

Single Bipolar Transistors Feature Summary

• NPN medium power transistor configuration
• Epitaxial silicon construction
• TO-92 cylindrical package

Single Bipolar Transistors Applications

• Switching circuits
• Amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation matches onsemi specifications. Confirm the part number suffix corresponds to the correct packaging variant. Ensure the component meets required electrical ratings for the intended circuit design before procurement.

Single Bipolar Transistors Selection Notes

Select this component for general-purpose NPN switching and amplification tasks requiring moderate current handling. Verify that the 45V collector-emitter voltage rating exceeds the maximum operating voltage in the target application to ensure reliable performance.

Single Bipolar Transistors Part Context

This component belongs to the BC63x series of NPN transistors produced by onsemi. It serves as a complement to other devices within the family, such as the PNP BC636, providing matched characteristics for complementary push-pull configurations in audio and power supply designs.

Single Bipolar Transistors Replacement Considerations

The BC636 is the documented PNP complement to the BC635.