Single Bipolar Transistors BC637_D27Z product image

BC637_D27Z

$0.06
  • Description:TRANS NPN 60V 1A TO-92-3
  • Series:-

SKU:a2a33713e3f6 Category: Brand:

  
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BC637_D27Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC637_D27Z

  • Description:TRANS NPN 60V 1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC637_D27Z

BC637_D27Z

Single Bipolar Transistors Overview

The BC637_D27Z is an NPN silicon epitaxial planar transistor manufactured by onsemi. It is designed for general-purpose amplifier and switching applications. The device features a maximum collector current of 1 A and a collector-emitter voltage rating of 80 V. It utilizes the TO-92 (TO-226AA) surface-mount compatible package, specifically the D27Z variant. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 630 at specified test conditions. The component supports a maximum power dissipation of 625 mW and operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

  • High DC current gain capability suitable for amplification tasks
  • Robust 1 A continuous collector current handling
  • 80 V collector-emitter breakdown voltage for medium-voltage switching
  • Compatible with standard automated surface-mount assembly processes

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-power electronic switching applications
  • Driver stages in consumer electronics
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix _D27Z to confirm the tape-and-reel packaging format required for surface-mount production lines. Ensure the order specifies the onsemi manufacturer to guarantee compliance with the published electrical parameters and RoHS directives. Cross-reference the datasheet revision date to confirm the active status of the component before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V blocking capability and 1 A current capacity is required in a compact SMD form factor. Compare against the BC639 if higher voltage ratings are needed, or the BC337 if lower voltage operation suffices. Consider the hFE binning requirements for linear amplifier designs to ensure consistent gain performance across production batches.

Single Bipolar Transistors Part Context

This part belongs to the widely used BC63x series of NPN transistors, which includes variants like the BC635, BC637, and BC639. These devices share similar physical packages and thermal characteristics but differ primarily in their voltage ratings. The BC637 serves as a mid-range option within this family, balancing voltage and current capabilities for versatile industrial and commercial use cases.

Single Bipolar Transistors Replacement Considerations

Direct pin-compatible substitutes include the BC639 (higher voltage) and BC635 (lower voltage). Verify that alternative manufacturers' parts meet the same TO-226AA footprint dimensions and electrical limits. Check for equivalent hFE grading bins if the application demands strict gain consistency.

BC637_D27ZBC637_D27Z
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