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The BC69PA-QX is a PNP silicon bipolar junction transistor (BJT) manufactured by Nexperia. It is housed in the DFN-2020D-3 (SOT1061/HUSON3) surface-mount package. Key electrical ratings include a maximum collector current of 2 A, a collector-emitter voltage (VCEO) of 20 V, and a collector-base voltage (VCBO) of 32 V. The device features an emitter-base voltage (VEBO) of 5 V and a power dissipation (Pd) of 420 mW. DC current gain (hFE) ranges from 85 to 375 at -500 mA and -1 V. The transition frequency (fT) is 140 MHz, with a collector-emitter saturation voltage of 600 mV. Operating temperature spans from -55 °C to +150 °C.
Verify that the specific suffix '-QX' denotes the required AEC-Q101 automotive qualification grade. Confirm the package type matches the DFN-2020D-3 footprint requirements. Ensure the procurement documentation explicitly states compliance with RoHS directives. Cross-reference the manufacturer part number with official Nexperia databases to validate authenticity before integration into production schedules.
Select this component when a PNP transistor with high current handling and automotive-grade reliability is required. The exposed pad design facilitates efficient heat dissipation in compact layouts. Consider the 20 V voltage rating and 2 A current limit against circuit demands. The leadless package offers space savings compared to traditional plastic packages while maintaining robust thermal performance for power management tasks.
This component belongs to the BC69PA series of PNP medium-power transistors designed for surface-mount applications. It shares characteristics with the BCP69 and BC869 series but utilizes the specialized SOT1061 leadless package. The series is engineered for applications requiring high current density and excellent thermal stability within constrained PCB areas.
Publicly confirmed substitute part numbers are not available in the provided source material.