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The BC807-16LT3G is a PNP silicon general-purpose transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -500 mA. The device provides a DC current gain (hFE) range of 100 to 250 at IC = -100 mA, VCE = -1.0 V. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-23 surface-mount package.
Verify the specific ordering suffix LT3G corresponds to the 10,000-unit tape and reel packaging format. Confirm that the 'S' prefix is absent, indicating standard commercial site manufacturing rather than automotive-specific control requirements. Ensure compliance with RoHS directives matches project specifications.
Select this component when a PNP transistor with a minimum hFE of 100 is required. It serves as the complement to the BC817 series. Consider thermal derating above 25°C if operating on FR-5 boards. Verify that the -45 V rating meets circuit voltage requirements.
This part belongs to the BC807-L family of general-purpose PNP transistors. It shares the same physical package and basic electrical limits as the BC807-25L and BC807-40L variants, differing primarily in the guaranteed DC current gain ranges. The LT3G designation specifies the reel quantity and Pb-free status.
BC817-25LT3G is the complementary NPN device. Other manufacturers produce equivalent parts under the BC807-16 designation. Verify pinout compatibility (Base, Emitter, Collector) when substituting with non-onsemi sources.
The DC current gain (hFE) ranges from 100 to 250 when measured at IC = -100 mA and VCE = -1.0 V.
Standard versions are not explicitly marked for automotive use. Only devices with the 'S' prefix (e.g., SBC807-16LT3G) are AEC-Q101 qualified and PPAP capable.
The maximum VCE(sat) is -0.7 V when IC = -500 mA and IB = -50 mA.