BC807-25E6433

BC807-25E6433

$0.03
  • Description:TRANS PNP 45V 0.5A PG-SOT23-3-11
  • Series:-

SKU:a2b1bb9fa56e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.5A PG-SOT23-3-11
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
  • Power - Max:330 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23-3-11
  • Grade:-
  • Qualification:-

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BC807-25E6433

Overview

The BC807-25E6433 is a PNP surface-mount transistor manufactured by Infineon Technologies. It utilizes an epitaxial planar die construction within an SOT-23 package. The device features a maximum collector-emitter voltage of -45 V and a continuous collector current rating of -0.5 A. Power dissipation is rated at 300 mW, with a junction temperature range extending from -65 °C to +150 °C. This component serves as a general-purpose switching and amplification element.

Feature Summary

  • Epitaxial planar die construction for robust performance
  • Designed for automatic insertion processes
  • Suitable for audio frequency driver and amplifier applications

Applications

  • General purpose switching circuits
  • Audio frequency (AF) driver stages
  • Amplifier applications

Procurement Notes

Verify the specific manufacturer source, as the BC807-25 designation is widely produced by multiple vendors including NXP and Taiwan Semiconductor. Confirm that the E6433 suffix corresponds to Infineon's specific packaging or tape-and-reel configuration. Ensure the datasheet matches the required electrical parameters for your design, particularly the -45 V collector-emitter voltage limit.

Selection Notes

Select this component when a PNP transistor in an SOT-23 package is required for low-power switching or amplification. Consider the complementary BC817-25 if an NPN counterpart is needed for push-pull configurations. Verify thermal management requirements against the 300 mW power dissipation limit under expected operating conditions.

Part Context

This part belongs to the BC807 series of PNP silicon transistors. These devices are standard general-purpose components used in consumer electronics and industrial control systems. The SOT-23 form factor allows for compact PCB layouts and automated assembly.

Replacement Considerations

BC807-25HTSA1

FAQ

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is -45 V.

Is this transistor suitable for high-frequency RF applications?

No, it is specified for general-purpose switching and audio frequency (AF) applications, not high-frequency RF operations.

What is the complementary NPN transistor for this series?

The BC817 series provides the complementary NPN transistor option.

BC807-25E6433BC807-25E6433
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