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The BC807-25E6433 is a PNP surface-mount transistor manufactured by Infineon Technologies. It utilizes an epitaxial planar die construction within an SOT-23 package. The device features a maximum collector-emitter voltage of -45 V and a continuous collector current rating of -0.5 A. Power dissipation is rated at 300 mW, with a junction temperature range extending from -65 °C to +150 °C. This component serves as a general-purpose switching and amplification element.
Verify the specific manufacturer source, as the BC807-25 designation is widely produced by multiple vendors including NXP and Taiwan Semiconductor. Confirm that the E6433 suffix corresponds to Infineon's specific packaging or tape-and-reel configuration. Ensure the datasheet matches the required electrical parameters for your design, particularly the -45 V collector-emitter voltage limit.
Select this component when a PNP transistor in an SOT-23 package is required for low-power switching or amplification. Consider the complementary BC817-25 if an NPN counterpart is needed for push-pull configurations. Verify thermal management requirements against the 300 mW power dissipation limit under expected operating conditions.
This part belongs to the BC807 series of PNP silicon transistors. These devices are standard general-purpose components used in consumer electronics and industrial control systems. The SOT-23 form factor allows for compact PCB layouts and automated assembly.
BC807-25HTSA1
The maximum collector-emitter voltage (VCEO) is -45 V.
No, it is specified for general-purpose switching and audio frequency (AF) applications, not high-frequency RF operations.
The BC817 series provides the complementary NPN transistor option.