BC807-25LT3G

Overview

The BC807-25LT3G is a PNP silicon general-purpose transistor manufactured by onsemi. It features a collector-emitter voltage of -45 V, continuous collector current of -500 mA, and power dissipation of 225 mW on FR-5 boards. The device offers a DC current gain (hFE) range of 160 to 400 at -100 mA. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-23 surface-mount package.

Feature Summary

• PNP silicon construction for general-purpose switching and amplification
• High DC current gain with defined ranges for the -25 variant
• Lead-free, halogen-free, and RoHS compliant packaging

Applications

• General purpose switching circuits
• Amplifier applications
• Automotive electronics requiring AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix LT3G against official documentation to confirm the 10,000-unit tape and reel configuration. Ensure compliance with automotive PPAP requirements if the S prefix is necessary for unique site control changes. Confirm Pb-free status and RoHS alignment prior to procurement.

Selection Notes

Select this component when a PNP transistor with a minimum hFE of 160 is required. The -25 designation indicates a specific gain binning range compared to the -16 or -40 variants. Verify that the -45 V collector-emitter voltage rating meets the circuit's maximum reverse voltage requirements.

Part Context

This part belongs to the BC807-L series of general-purpose PNP transistors from onsemi. The series includes variants with different gain characteristics (-16L, -25L, -40L). The LT3G suffix specifically denotes the standard non-automotive version packaged in a 10,000-unit tape and reel format.

Replacement Considerations

BC807-25LT1G serves as a direct alternative with identical electrical specifications but differs in shipping quantity, utilizing a 3,000-unit tape and reel instead of the 10,000-unit configuration found in the LT3G variant.