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The BC807-40WH RFG is a PNP silicon bipolar junction transistor manufactured by Taiwan Semiconductor. It operates with a maximum collector-emitter voltage of 45 V and a collector-base voltage of 50 V. The device supports a continuous collector current of 500 mA and dissipates up to 200 mW of power. Key electrical parameters include a transition frequency of 80 MHz, a DC current gain ranging from 250 to 600, and a collector-emitter saturation voltage of 700 mV. It functions within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification.
Verify the specific suffix WH against the datasheet to confirm package type and halogen-free status. Confirm AEC-Q101 qualification requirements match the target application environment. Ensure the ordering code aligns with the required reel or cut-tape packaging format specified by the manufacturer.
Select this component when a PNP transistor with 45 V breakdown and 500 mA current capacity is required in an SOT-323 package. Consider the 80 MHz transition frequency for high-speed switching needs. Verify thermal resistance and power dissipation limits relative to the PCB layout and ambient operating conditions.
This part belongs to the BC807 series of small-signal PNP transistors. It serves as the complementary counterpart to NPN devices such as the BC817 series. The family offers various voltage ratings and packaging options to suit diverse general-purpose electronic applications.
Yes, the component is AEC-Q101 qualified, indicating it meets automotive reliability standards.
The maximum collector-emitter voltage (VCEO) is rated at 45 V.