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The BC807-40_R1_00001 is a PNP general-purpose transistor manufactured by Panjit International Inc. It utilizes an epitaxial silicon planar design within a SOT-23 plastic case. Key electrical specifications include a collector-emitter voltage of -45 V, continuous collector current of -500 mA, and peak collector current of -1000 mA. The device features a DC current gain (hFE) range of 250 to 600 at Ic=-100mA, Vce=-1V. Total power dissipation is rated at 330 mW, with a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official Panjit documentation to confirm package type and packing quantity. Ensure the component meets environmental compliance requirements such as RoHS2.0 and halogen-free status if mandated by the project specifications. Cross-reference the datasheet revision date to ensure access to the most current technical parameters and mechanical drawings.
Select this component when a PNP transistor with a minimum hFE of 250 is required for low-current amplification or switching tasks. The SOT-23 package offers a compact footprint suitable for space-constrained surface mount designs. Consider the thermal resistance characteristics and maximum power dissipation limits relative to the expected operating conditions and board layout.
This part belongs to the BC807 series, which includes variants like BC807-16 and BC807-25 distinguished primarily by their DC current gain ranges. The BC807-40 specifically targets applications needing higher gain consistency compared to lower-gain counterparts. All variants share identical voltage and current ratings but differ in hFE binning.
Compatible replacements include other manufacturers' BC807-40 equivalents. Verify pinout compatibility (Base-Emitter-Collector) and ensure replacement parts meet the same -45V VCEO and -500mA IC specifications.