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The BC80716E6327 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SMD/SMT SC-74-6 package and belongs to the BC807 series. The device features a maximum DC collector current of 500 mA, a collector-emitter voltage (VCEO) of 50 V, and a collector-base voltage (VCBO) of 60 V. Key electrical parameters include an emitter-base voltage (VEBO) of 5 V, a power dissipation (Pd) of 250 mW, and a transition frequency (fT) of 100 MHz. It operates within a temperature range of -65°C to +150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status via the specific datasheet revision. Check for end-of-life notices as availability may vary. Ensure packaging type matches production requirements. Validate part markings against official specifications before integration.
Select this component for designs requiring a PNP transistor with 500 mA continuous current capability in a small footprint. Consider the 50 V voltage rating for low-voltage control applications. Evaluate thermal management needs given the 250 mW power dissipation limit in the SC-74-6 package. Compare fT performance against circuit speed requirements.
This device is part of the BC807 family of PNP transistors from Infineon. It shares similar form factors and electrical characteristics with other members like BC807-16 and BC807U variants. The E6327 suffix typically denotes specific tape-and-reel packaging configurations used in high-volume manufacturing environments.
Public confirmed substitute part numbers include BC807-16E6327 and BC-807-16-E6327. Cross-reference pinouts and absolute maximum ratings before substitution.