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The BC807UE6327HTSA1 is a dual PNP silicon bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is housed in an SC-74-6 surface-mount package and certified to AEC-Q100 automotive standards. The device supports a maximum continuous collector current of 500 mA with a collector-emitter voltage rating of 45 V and a collector-base voltage of 50 V. Key electrical parameters include a DC current gain ranging from 160 to 400, a transition frequency of 200 MHz, and a power dissipation capacity of 330 mW. It operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix E6327HTSA1 to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains active or note the obsolescence warning if sourcing from secondary markets. Cross-reference the datasheet revision date to ensure compatibility with current design requirements and regulatory compliance standards.
Select this component when a dual PNP configuration is required in a small SMD footprint. Ensure the circuit design accommodates the 45 V collector-emitter voltage limit and 500 mA current rating. Consider the thermal management needs given the 330 mW power dissipation limit in the SC-74-6 package for high-duty cycle operations.
This part belongs to the BC807 series of PNP silicon transistors from Infineon. It serves as the dual-array variant within the broader family of small-signal BJTs designed for general-purpose amplification and switching. The specific suffix denotes the automated tape-and-reel packaging format intended for high-volume surface-mount assembly processes.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official Infineon resources or distributor cross-reference tools for compatible alternatives before finalizing the bill of materials.