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The BC817-16LT3G is an NPN silicon general-purpose transistor manufactured by onsemi in a SOT-23 surface-mount package. It features a collector-emitter voltage of 45 V, continuous collector current of 500 mA, and total device dissipation of 300 mW on an alumina substrate. The DC current gain ranges from 100 to 250 at 100 mA. Operating junction temperature spans -65°C to +150°C.
Verify the specific ordering suffix LT3G corresponds to the 10,000-unit tape and reel configuration as documented in the official datasheet. Confirm that the prefix indicates standard production rather than automotive-specific site requirements if non-automotive grade is intended. Ensure compatibility with Pb-Free manufacturing standards.
Select this component when a 45 V NPN transistor with 500 mA capability is required in a compact SOT-23 footprint. The BC817-16 variant provides a minimum hFE of 100, suitable for moderate gain applications. Consider thermal derating above 25°C based on the specified junction-to-ambient resistance values for the chosen PCB substrate material.
This part belongs to the BC817-L family of general-purpose NPN transistors. The '16' designation specifies the DC current gain binning range (100-250). Other variants in the series include BC817-25 and BC817-40, which offer higher gain thresholds. The LT3G suffix denotes the specific tape and reel packaging quantity.
Direct substitutes within the same family include BC817-25LT3G and BC817-40LT3G, provided higher current gain is acceptable. Cross-manufacturer equivalents such as Nexperia BC817-16 or Diotec BC817-16 share identical electrical ratings and pinout configurations.