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Product Detailed Parameters
- Description：TRANS NPN 45V 0.5A SOT-23
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The BC817-25 RFG is a single NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 500 mA. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 300 mW of power. Key electrical characteristics include a transition frequency of 100 MHz, a minimum DC current gain (hFE) of 160 at 100 mA and 1 V, and a maximum collector cutoff current of 100 nA. The saturation voltage is specified at 700 mV under specific base and collector current conditions.
Feature Summary
- Single NPN configuration housed in a surface-mount SOT-23 package for compact circuit integration.
- High DC current gain ensures efficient signal amplification and switching performance.
- Robust thermal stability supports operation across extended industrial temperature ranges.
Applications
- General-purpose signal amplification circuits
- Electronic switching applications
- Driver stages for low-power loads
Procurement Notes
Verify the complete part number including the RFG suffix against official Taiwan Semiconductor documentation to ensure correct packaging and specifications. Confirm RoHS compliance status and manufacturing origin details directly with the supplier or authorized distributors prior to procurement. Cross-reference datasheet revisions to account for any potential updates in mechanical dimensions or electrical limits.
Selection Notes
Select this component when a standard NPN transistor with 45 V breakdown and 500 mA current capability is required in an SOT-23 footprint. Ensure the application's power dissipation requirements remain within the 300 mW limit considering ambient temperature conditions. Verify that the hFE binning aligns with the circuit's gain requirements for consistent performance.
Part Context
This component belongs to the BC817 series of general-purpose NPN transistors produced by Taiwan Semiconductor Corporation. The series offers various gain grades to accommodate different circuit sensitivities. The RFG suffix typically denotes specific tape-and-reel packaging configurations suitable for automated surface-mount assembly processes.
Replacement Considerations
BC817-16 RFG
FAQ
What is the minimum DC current gain for the BC817-25 RFG?
The minimum DC current gain (hFE) is 160, measured at a collector current of 100 mA and a collector-emitter voltage of 1 V.
What is the maximum power dissipation rating?
The maximum power dissipation is 300 mW.
Is the BC817-25 RFG AEC-Q101 qualified?
Based on available public documentation for this specific manufacturer and part number, AEC-Q101 qualification is not explicitly confirmed. Other manufacturers' variants may carry this certification.
