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The BC817-25FSWQ-7 is an NPN small-signal BJT in a U-DFN1412-3 package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 500 mA. The DC current gain (hFE) ranges from 160 to 400 at IC = 100 mA, VCE = 1 V. Transition frequency (fT) is 100 MHz. Power dissipation is 500 mW at 25°C ambient on a minimum recommended pad layout. Thermal resistance junction-to-ambient is 250 °C/W under standard conditions.
Verify the specific Diodes Incorporated datasheet DS46754 Rev. 2 - 2 for final electrical limits and thermal derating curves. Confirm that the U-DFN1412-3/SWP (Type A) footprint matches your PCB design guidelines. Ensure compliance with IATF16949 manufacturing standards if automotive qualification is required for your system.
Select this component when a low-profile surface-mount NPN transistor is needed for automotive-grade reliability. The BC817-25 variant offers a mid-range hFE specification compared to the -16 or -40 options. Consider the 0.6 mm height constraint and sidewall plating requirements for assembly inspection processes.
This part belongs to the BC817-16FSWQ through BC817-40FSWQ family. All variants share identical physical dimensions, pinouts, and maximum ratings. They differ primarily in their DC current gain (hFE) specifications. The suffix '-7' indicates reel packaging containing 5,000 units per carrier.
BC817-16FSWQ-7
The device has an Electrostatic Discharge Human Body Model (HBM) rating of 4000 V (JEDEC Class 3A) and a Charged Device Model (CDM) rating of 1000 V (Class C3).
On a minimum recommended pad layout on a single-sided 1.6mm FR4 PCB, the thermal resistance junction-to-ambient is 250 °C/W. Using a 1-inch square pad with 2oz copper reduces this to 100 °C/W.
Yes, the operating and storage temperature range extends from -55°C to +150°C.