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The BC817-40W-7 is an NPN small signal transistor manufactured by Diodes Incorporated, housed in a SOT323 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 500 mA. The device has a maximum power dissipation (PD) of 200 mW and a transition frequency (fT) of 100 MHz. DC current gain (hFE) ranges from 250 to 600 at IC = 100mA, VCE = 1.0V. It operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration as documented in the manufacturer's ordering information section. Confirm that the component meets the required environmental specifications, including RoHS compliance and halogen-free status, before finalizing procurement orders.
Select this component when a compact SOT323 footprint is required for NPN switching or amplification tasks. Ensure the design accommodates the 200 mW power dissipation limit under expected operating conditions. Verify that the 45 V collector-emitter voltage rating provides sufficient margin for the target circuit application.
This part belongs to the BC817-xxW series of general-purpose NPN transistors. It serves as the complementary counterpart to the BC807-xxW PNP type. The 'W' designation indicates the SOT323 package variant, distinguishing it from other package options within the broader BC817 family.
BC817-40W-AQ
The maximum collector-base voltage (VCBO) is 50 V.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
The electrostatic discharge human body model (ESD HBM) rating is 4,000 V, classified under JEDEC Class 3A.