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The BC817DPN,115 is a dual bipolar junction transistor array manufactured by Nexperia USA Inc., housed in a compact 6-TSOP (SC-74, SOT-457) surface-mount package. This component integrates one NPN and one PNP transistor within a single device, offering a maximum collector current of 500 mA and a collector-emitter voltage rating of 45 V. The unit supports a maximum power dissipation of 600 mW and operates across a temperature range from -65°C to +150°C. Key electrical specifications include a minimum DC current gain (hFE) of 160 at 100 mA with 1 V collector-emitter voltage, and transition frequencies of 100 MHz for the NPN section and 80 MHz for the PNP section. The saturation voltage is specified at a maximum of 700 mV under conditions of 50 mA base current and 500 mA collector current.
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment due to the small SC-74 footprint. Confirm moisture sensitivity level requirements during storage and handling procedures prior to soldering.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Compare the 600 mW power dissipation limit against thermal constraints in the target application. Verify that the 45 V voltage rating exceeds the maximum operating voltage of the circuit to ensure reliable performance.
This part belongs to the BC817 series of general-purpose transistors produced by Nexperia. It serves as the dual-array counterpart to single-transistor variants like the BC817-40W,115. The device is designed for cost-effective integration in digital and analog switching applications where space savings and reduced assembly complexity are prioritized over individual discrete component flexibility.
Direct substitutes include other dual BJT arrays in the SC-74 package with matching electrical ratings. Verify pinout compatibility and thermal characteristics before substitution.