BC817UPNE6327HTSA1

Overview

The BC817UPNE6327HTSA1 is an NPN silicon dual bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It features a SC-74-6 surface-mount package and supports AEC-Q100 automotive qualification. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device handles a continuous DC collector current of 500 mA with a power dissipation (Pd) of 330 mW. It offers a gain-bandwidth product (fT) of 170 MHz, a collector-emitter saturation voltage of 700 mV, and a DC current gain (hFE) range from 160 to 400 at 100 mA.

Feature Summary

• Dual NPN configuration within a compact SC-74-6 surface-mount package for space-constrained designs.
• Automotive-grade reliability certified under the AEC-Q100 standard for robust performance in vehicle electronics.
• High-frequency operation capability supported by a 170 MHz gain-bandwidth product suitable for general-purpose switching.

Applications

• General-purpose switching circuits in automotive electronic systems.
• Signal amplification stages requiring dual transistor arrays.
• Low-voltage logic interfacing and level shifting applications.

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific suffix matches the required automotive grade and packaging format. Check current lifecycle status as obsolescence notices may affect long-term supply availability. Ensure storage conditions comply with moisture sensitivity levels defined in the datasheet to prevent package damage during soldering processes.

Selection Notes

Select this component when a dual NPN BJT array is required in a SC-74-6 footprint. Compare against single-transistor alternatives if board space permits, noting the 330 mW total power dissipation limit applies to the entire package. Verify that the 45 V VCEO rating meets the circuit's maximum operating voltage requirements. Consider the hFE range of 160 to 400 for biasing calculations in amplifier designs.

Part Context

This part belongs to the BC817 series of NPN silicon transistors produced by Infineon Technologies. The series includes various configurations such as single and dual units in packages like SOT-23 and SC-74. The BC817UPNE6327HTSA1 specifically denotes the dual variant optimized for automotive applications, distinguishing it from standard industrial versions through its AEC-Q100 certification and specific binning parameters.

Replacement Considerations

Direct substitutes include other BC817UP variants from different manufacturers that match the SC-74-6 package and electrical ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with Nexperia or Diodes Incorporated dual NPN arrays if equivalent hFE bins and voltage ratings are confirmed.