BC846AW RFG

$0.15

Description：TRANS NPN 65V 0.1A SOT-323
Series：-

SKU:e2f20116c5ae Category: Single Bipolar Transistors Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 65V 0.1A SOT-323
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：65 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
Power - Max：200 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SOT-323
Grade：-
Qualification：-

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BC846AW RFG

Overview

The BC846AW RFG is an NPN general-purpose bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 65 V and a continuous collector current rating of 100 mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 200 mW of power. Key electrical characteristics include a DC current gain (hFE) minimum of 200 at 2 mA and 5 V, and a transition frequency of 100 MHz. It is housed in the SOT-323 surface-mount package.

Feature Summary

NPN epitaxial silicon planar design for general-purpose amplification
High DC current gain with a minimum value of 200 under specified test conditions
Compliant with RoHS 3 directives and halogen-free green molding compound standards

Applications

General purpose amplifier circuits
Switching applications requiring low power dissipation
Signal processing in consumer electronics

Procurement Notes

Verify the specific suffix 'RFG' against the manufacturer's official datasheet to confirm packaging type and tape-and-reel specifications. Ensure the component meets RoHS 3 and REACH regulatory requirements for your target market. Confirm that the SOT-323 package dimensions align with your PCB footprint design before finalizing procurement orders.

Selection Notes

Select this component when a 65 V breakdown voltage is required, distinguishing it from lower-voltage variants like the BC847A (45 V). The high hFE minimum of 200 makes it suitable for applications demanding significant signal amplification. Verify compatibility with SOT-323 assembly processes and ensure thermal management supports the 200 mW power dissipation limit in the intended enclosure.

Part Context

This part belongs to the BC846/7/8 series of small-signal NPN transistors. The 'BC846' designation specifically indicates a 65 V collector-emitter voltage rating, differentiating it from the 45 V BC847 and 30 V BC848 counterparts. All variants share similar current ratings and package types but are distinguished by their voltage capabilities and gain groupings.