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The BC846AWT1G is an NPN silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of 65 V and a continuous collector current of 100 mA dc. The device features a DC current gain (hFE) range of 110 to 220 at IC = 10 mA and VCE = 5.0 V. It utilizes the SC-70/SOT-323 surface-mount package, providing a total device dissipation of 200 mW on an FR-5 board. The transition frequency is specified at 100 MHz.
Verify the specific ordering suffix 'WT1G' against the manufacturer's official documentation to confirm the SC-70 package type and tape-and-reel shipping configuration. Ensure that the 'G' designation aligns with the required environmental compliance standards for the target assembly process. Cross-reference the marking code '1E' with the datasheet to validate the component identity upon receipt.
Select this component when a small form factor NPN transistor is required for low-power signal amplification or switching tasks. The BC846AWT1G offers a moderate gain band suitable for standard analog and digital interface circuits. Consider the thermal resistance and maximum junction temperature limits during PCB layout to ensure reliable operation within the specified -55°C to +150°C range.
This part belongs to the BC846/BC847/BC848 family of general-purpose NPN transistors from onsemi. The 'A' suffix indicates a specific DC current gain binning category, distinguishing it from 'B' or 'C' variants. These devices share identical pinouts and mechanical dimensions but differ in electrical performance characteristics, specifically regarding hFE ranges and saturation voltages.
Direct substitutes include BC846AWT1G equivalents from other manufacturers such as Nexperia (BC846AW) or Diotec Semiconductor (BC846BW), provided they meet the same SOT-323 footprint and electrical ratings. Verify that alternative sources offer comparable gain binning and thermal characteristics before implementation.
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive applications requiring unique site and control change requirements.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 65 V at IC = 10 mA.