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The Diotec Semiconductor BC846B is a surface-mount general-purpose NPN bipolar junction transistor housed in an SOT-23 (TO-236) package. It supports a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA, with a peak collector current rating of 200 mA. The device dissipates up to 250 mW of power at ambient temperature and operates within a junction temperature range of -55°C to +150°C. It features three distinct DC current gain groups, with the 'B' group providing a minimum hFE of 200 at IC = 2 mA and VCE = 5 V. The component utilizes gold bond wires and complies with RoHS directives.
Verify that the ordered part number matches the exact suffix requirements for your specific application grade. Confirm whether commercial or industrial specifications are required, as these dictate the maximum power dissipation limits and internal bonding materials. Ensure compliance with REACH regulations and conflict mineral declarations if mandated by your supply chain standards before finalizing procurement.
Select the BC846B when a general-purpose NPN transistor with a 65V breakdown voltage and 100mA current capacity is needed in a compact SOT-23 footprint. Choose this specific gain group ('B') if a minimum DC current gain of 200 is required under standard test conditions. Consider the thermal resistance and power dissipation limits relative to your PCB pad layout to ensure reliable operation within the specified temperature range.
This component belongs to the BC846A through BC850C series of SMD universal NPN transistors manufactured by Diotec Semiconductor. The series offers various voltage ratings and gain groupings across different case outlines. The BC846B specifically denotes the 65V variant with the middle-tier current gain grouping, serving as a versatile discrete semiconductor solution for standard commercial and industrial electronic designs.
BC846A and BC846C are available within the same series offering different current gain groupings.