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The BC846BW,135 is an NPN general-purpose transistor manufactured by Nexperia USA Inc. It is housed in a SOT323 (SC-70) surface-mount package. The device supports a collector-emitter voltage of 65 V and a continuous collector current of 100 mA. Peak currents reach 200 mA for single pulses up to 1 ms. Total power dissipation is rated at 200 mW with a junction temperature limit of 150 °C. DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA and VCE = 5 V. Transition frequency is 100 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the required gain binning for the intended application. Confirm RoHS compliance status through the latest product data sheet before finalizing procurement orders.
Select this component when a small form factor NPN transistor is required for low-power applications. The high hFE range suits sensitive amplification tasks. Verify thermal management requirements against the 200 mW dissipation limit. Ensure operating conditions remain within the specified voltage and current ratings to maintain reliability.
This part belongs to the BC846xW series, which includes variants with different gain selections. The BC846BW specifically denotes the high-gain bin within the SC-70 package family. It serves as a complement to PNP devices like the BC856BW. The series is designed for general electronic applications requiring compact size and standard performance characteristics.
BC846AW,135
The marking code is 1B%.
The maximum peak collector current is 200 mA for single pulses with a duration of 1 ms or less.
The thermal resistance from junction to ambient in free air is 625 K/W.