SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC846PN is a dual small-signal bipolar junction transistor (BJT) manufactured by Diotec Semiconductor, housed in an SOT-363 surface-mount package. It integrates one NPN and one PNP transistor within a single compact casing. The device supports a maximum DC collector current of 100 mA and offers a collector-emitter breakdown voltage (VCEO) of 65 V for the NPN element. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2 mA, a transition frequency (fT) of 100 MHz, and a power dissipation rating of 250 mW on standard PCB layouts. The component operates reliably across a temperature range from -55°C to +150°C.
Verify the specific ordering suffix when purchasing, as it determines automotive qualification status. Standard versions are commercial grade, while suffixes like -Q indicate AEC-Q101 compliance and -AQ indicates ongoing qualification. Confirm that the supplier provides official datasheets matching the exact part number variant to ensure correct technical specifications and reliability ratings are met for the intended design.
Select this component for designs requiring two matched complementary transistors in a minimal footprint. Ensure the application stays within the 100 mA continuous collector current limit and 65 V collector-emitter voltage constraints. Consider the thermal resistance values based on the specific PCB copper pad layout, as power dissipation capabilities vary between minimum recommended pads and larger 3 mm² terminal areas.
This component belongs to the BC846 series of general-purpose NPN/PNP transistor arrays produced by Diotec Semiconductor. It shares the same physical SOT-363 package form factor as related parts like the BC847PN, though the BC846PN features higher voltage ratings (65 V vs 45 V). The series is widely used in consumer electronics and industrial control boards where space-saving dual-transistor solutions are required.
BC847PN