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The BC846S/DG/B2,115 is a dual NPN bipolar junction transistor (BJT) array manufactured by Nexperia. It is housed in a SOT363 (SC-88) surface-mount package. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. Additional voltage limits include a collector-base voltage of 80 V and an emitter-base voltage of 6 V. The component has a power dissipation capacity of 300 mW and a transition frequency of 100 MHz. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix DG/B2 against official Nexperia documentation to confirm tape-and-reel specifications and binning details. Ensure compatibility with standard SMT assembly processes for the SOT363 package. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when a dual NPN transistor is required in a minimal footprint. The 65 V rating suits low-voltage digital and analog applications. Compare the 100 mA current limit and 100 MHz frequency against circuit requirements. Consider thermal management for the 300 mW dissipation limit in dense PCB layouts.
This part belongs to the Nexperia BC846 series of general-purpose NPN transistors. The 'S' designation typically indicates the SOT363 dual package variant. The 'DG/B2' suffix denotes specific manufacturing or packaging parameters defined by Nexperia. This series is widely used in consumer electronics and industrial control systems requiring small-signal switching.
Direct substitutes include other dual NPN transistors in SOT363 packages with similar electrical ratings. Verify pinout compatibility and voltage/current limits when replacing with parts from different manufacturers. Check datasheets for equivalent gain bands and saturation voltages to ensure circuit performance parity.