BC846S/DG/B3F

Overview

The BC846S/DG/B3F is a dual NPN bipolar junction transistor array manufactured by Nexperia USA Inc. It features two fully isolated transistors within a compact SOT-363 (SC-88) surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 65 V. Key electrical characteristics include a transition frequency of 100 MHz, a power dissipation of 300 mW, and a DC current gain range of 200 to 450 at specified test conditions. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• Dual NPN configuration with internal isolation for independent operation
• AEC-Q101 qualified for automotive reliability standards
• Current gain and base-emitter voltage matching for precision applications

Applications

• Current mirror circuits
• Differential amplifier stages
• General-purpose signal switching

Procurement Notes

Verify the specific suffix 'DG/B3F' against official Nexperia documentation to confirm tape-and-reel specifications and marking codes. Ensure compatibility with standard SOT-363 footprint requirements during procurement planning.

Selection Notes

Select this component when space-constrained designs require matched dual NPN transistors. The AEC-Q101 qualification makes it suitable for automotive environments requiring high thermal stability and reliable performance under varying load conditions.

Part Context

This part belongs to the BC846 series of small-signal dual transistors. It serves as a drop-in replacement for standard double transistors in existing designs while offering improved matching characteristics and a smaller form factor compared to older packaging technologies.

Replacement Considerations

Direct substitutes include BCM846BSX and BC846SZ. Verify pinout compatibility and thermal resistance differences before substitution.