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The BC846S/DG/B4F is a dual NPN silicon bipolar junction transistor manufactured by Nexperia. It integrates two galvanically isolated transistors within a single SOT363 (SC-88) surface-mount package. Key electrical ratings include a collector-emitter voltage of 65 V, a collector-base voltage of 80 V, and an emitter-base voltage of 6 V. The device supports a maximum continuous DC collector current of 100 mA with a total power dissipation of 300 mW. It features a gain-bandwidth product of 100 MHz and operates across a temperature range from -65 °C to +150 °C.
Verify the specific suffix DG/B4F against official Nexperia documentation to confirm reel packaging specifications and marking codes. Ensure compatibility with standard SOT363 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement orders.
Select this component when space-constrained designs require two independent NPN switches or amplifiers. The SOT363 package offers a smaller footprint compared to dual SOT23 arrangements. Consider the 65 V rating for low-voltage signal processing tasks where high isolation between channels is necessary without additional discrete components.
This part belongs to the BC846 series of small-signal NPN transistors produced by Nexperia. The BC846 family is widely used in consumer electronics and industrial control systems. The dual-transistor variant consolidates functionality into a single surface-mount device, reducing assembly complexity and board area compared to using separate single transistors.
BC846S/115 serves as a direct functional equivalent with identical electrical characteristics and pinout. Verify that substitute parts maintain the same SOT363 package dimensions and thermal resistance values to ensure mechanical fit and performance parity in existing designs.