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The BC846S/DG/B4X is a dual NPN bipolar junction transistor (BJT) manufactured by Nexperia. It utilizes the SOT363 (SC-88) surface-mount package, which integrates two fully isolated transistors within a single compact plastic housing. The device supports a maximum continuous collector current of 100 mA and withstands a collector-emitter voltage (VCEO) of 65 V. Key electrical specifications include a collector-base voltage (VCBO) of 80 V, an emitter-base voltage (VEBO) of 6 V, and a power dissipation rating of 300 mW. The component features a transition frequency (fT) of 100 MHz and operates across a temperature range from -65°C to +150°C.
Verify the specific suffix 'DG/B4X' against official Nexperia documentation to confirm tape-and-reel quantity and handling specifications. Ensure compatibility with standard SMD assembly processes for the SOT363 footprint. Cross-reference part numbers with authorized distributors to validate authenticity and traceability.
Select this component for applications requiring dual NPN functionality in a minimal footprint. Compare saturation voltage and gain bandwidth requirements against alternative BJT arrays. Confirm that the 300 mW power dissipation limit aligns with thermal management constraints in the target enclosure design.
This part belongs to the BC846 series of general-purpose NPN transistors. It shares functional similarities with other SOT363 dual transistors but offers specific voltage and current ratings defined by the BC846 designation. The series is widely used in consumer electronics and industrial control systems requiring reliable low-power switching.
Potential substitutes include BCM846BSX or BC846BS,115. Verify pinout compatibility and ensure that gain ranges and saturation voltages meet circuit requirements before substitution.