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The BC846S-TPQ2 is a dual NPN bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It features two internally isolated transistors within a single SOT-363 surface-mount package. The device supports a collector-emitter voltage of 65V and a continuous collector current of 100mA, with a maximum power dissipation of 200mW. Key electrical characteristics include a DC current gain (hFE) minimum of 110 at 2mA and 5V, and a transition frequency of 100MHz. The saturation voltage is specified at a maximum of 300mV under standard test conditions.
Verify the specific suffix 'Q2' against official MCC documentation to confirm tape-and-reel specifications or AEC-Q101 qualification status, as datasheets may primarily reference the base 'BC846S-TP' designation. Ensure compatibility with RoHS3 and REACH standards during sourcing.
Select this component when a dual NPN configuration with matched characteristics is required in a minimal footprint. Compare hFE ranges and saturation voltages against alternative BJT arrays if specific gain thresholds are critical for the target circuit performance.
This part belongs to the BC846 series of dual NPN transistors. It shares the core electrical profile with variants like BC846BS and BC846C, differentiated primarily by gain binning. The SOT-363 package allows for automated assembly in high-volume consumer electronics manufacturing.
Direct substitutes include BC846BS-TP and BC846C-TP from the same manufacturer. Cross-brand equivalents such as the NXP BC846S or ON Semiconductor BC846DSC100FT1G offer compatible pinouts and electrical ratings.