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The BC846SE6433BTMA1 is a dual NPN silicon small-signal transistor manufactured by Infineon Technologies. It is housed in an SOT-363 surface-mount package, providing two independent NPN transistors within a single compact footprint. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of 65 V. Key electrical specifications include a collector-base voltage of 80 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 250 mW. The component operates reliably across a temperature range from -65°C to +150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm pinout compatibility and material composition. Confirm end-of-life status or obsolescence notices prior to procurement planning. Ensure that the selected variant matches the required tape-and-reel packaging specifications for automated assembly processes.
Select this component when a dual NPN topology is required in a minimal SOT-363 footprint. Compare the 65 V collector-emitter voltage and 100 mA current limits against circuit requirements. Consider the 250 mW power dissipation limit and thermal management needs for high-density PCB layouts.
This part belongs to the BC846 series of small-signal NPN transistors. It shares functional similarities with other dual-transistor variants but differs in packaging and specific electrical tolerances. The SOT-363 package distinguishes it from single-transistor counterparts like the BC846C.
Potential substitutes include other dual NPN transistors in SOT-363 packages with matching voltage and current ratings. Verify pin-to-pin compatibility and hFE binning requirements before substitution.