BC846SE6433BTMA1

BC846SE6433BTMA1

  • Description:TRANS 2NPN 65V 0.1A PG-SOT363-PO
  • Series:-

SKU:f45bf654d5be Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN 65V 0.1A PG-SOT363-PO
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Grade:-
  • Qualification:-

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BC846SE6433BTMA1

Overview

The BC846SE6433BTMA1 is a dual NPN silicon small-signal transistor manufactured by Infineon Technologies. It is housed in an SOT-363 surface-mount package, providing two independent NPN transistors within a single compact footprint. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of 65 V. Key electrical specifications include a collector-base voltage of 80 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 250 mW. The component operates reliably across a temperature range from -65°C to +150°C.

Feature Summary

  • Dual NPN configuration for space-efficient circuit design
  • High thermal stability with extended operating temperature range
  • Low saturation voltage for efficient switching applications

Applications

  • General-purpose signal amplification
  • Switching circuits in consumer electronics
  • Driver stages for low-power loads

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm pinout compatibility and material composition. Confirm end-of-life status or obsolescence notices prior to procurement planning. Ensure that the selected variant matches the required tape-and-reel packaging specifications for automated assembly processes.

Selection Notes

Select this component when a dual NPN topology is required in a minimal SOT-363 footprint. Compare the 65 V collector-emitter voltage and 100 mA current limits against circuit requirements. Consider the 250 mW power dissipation limit and thermal management needs for high-density PCB layouts.

Part Context

This part belongs to the BC846 series of small-signal NPN transistors. It shares functional similarities with other dual-transistor variants but differs in packaging and specific electrical tolerances. The SOT-363 package distinguishes it from single-transistor counterparts like the BC846C.

Replacement Considerations

Potential substitutes include other dual NPN transistors in SOT-363 packages with matching voltage and current ratings. Verify pin-to-pin compatibility and hFE binning requirements before substitution.

BC846SE6433BTMA1BC846SE6433BTMA1

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