SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC846UPNE6327HTSA1 is an NPN + PNP dual bipolar junction transistor array manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount SC-74 (SOT-363) package with six pins. The device supports a maximum DC collector current of 100 mA and features a collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 6 V. Key electrical parameters include a power dissipation of 250 mW, a transition frequency (fT) of 250 MHz, and a collector-emitter saturation voltage of 200 mV. The component operates within a temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix E6327HTSA1 against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS compliance status. Confirm that the SC-74 package dimensions match the target PCB footprint requirements. Check for any obsolescence notices or lifecycle changes directly from Infineon, as distribution availability may vary by region.
Select this component when a matched NPN and PNP pair is required in a minimal footprint. Ensure the application voltage does not exceed the 80 V collector-emitter rating. Consider the 250 mW power dissipation limit and derating curves for thermal management. Verify that the 100 mA current rating meets the load requirements without exceeding the saturation voltage limits.
This part belongs to the BC846 series of small-signal transistors. It represents a dual-transistor variant offering complementary polarity options in a single package. The SC-74 housing provides a compact solution compared to discrete components, facilitating denser board layouts while maintaining standard small-signal performance metrics.
Compatible substitutes include other BC846UPN variants from different manufacturers that share the SC-74 package and identical electrical ratings. Verify pin-to-pin compatibility and hFE binning if precise gain matching is critical for the specific application.