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The MDD BC847A is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter breakdown voltage of 45 V and a maximum continuous collector current of 100 mA. The device operates with a transition frequency of 100 MHz and dissipates up to 200 mW of power. DC current gain is specified at a minimum of 110 when tested at 2 mA collector current and 5 V collector-emitter voltage. The component utilizes the SOT-23 package and supports a junction temperature range from -65°C to 150°C.
Verify the manufacturer designation matches MDD, as BC847A is a generic part number produced by multiple vendors. Confirm the specific suffix indicates the correct binning for hFE gain requirements. Ensure the package type aligns with the intended PCB footprint. Check RoHS compliance status against project specifications. Validate that the datasheet parameters meet the circuit design constraints before finalizing procurement.
Select this component when a standard NPN transistor with moderate gain and low power dissipation is required. The 100 mA current rating suits most low-power logic interfaces. Consider the thermal limits if operating near the maximum junction temperature. Compare the hFE binning against other manufacturers if strict gain consistency is necessary for the application.
This component belongs to the BC84 series of small-signal transistors. These devices are widely used in consumer electronics and industrial equipment due to their standardized pinout and reliable performance. The BC847A variant specifically offers a defined minimum gain range compared to other letters in the series.
BC847A-TP by Micro Commercial Components (MCC). BC847BTT1G by onsemi.